发明名称 HIGH FREQUENCY CIRCUIT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To obtain a circuit device free from high frequency signal attenuation due to the impedance mismatch of high frequency signal wires. SOLUTION: Earth potential bonding pads 11 are arranged on both sides of a high frequency signal bonding pad 4. In the part between two neighboring high frequency semiconductor chip elements 1, the bonding pads 4 and package side transmission lines are connected by using a high frequency signal wire 2 and earth potential wires 12 which are arranged parallel with the high frequency signal wire 2. The wires 2, 12 constitute a pseudo coplanar type high frequency transmission line. Thereby the characteristic impedance of the pseudo coplanar type high frequency transmission line can be matched with that of a high frequency transmission line 6, so that attenuation of a high frequency signal which is to be caused by the impedance mismatch between the high frequency signal wire 2 and the high frequency semiconductor chip element 1 can be prevented.</p>
申请公布号 JPH09148524(A) 申请公布日期 1997.06.06
申请号 JP19950309238 申请日期 1995.11.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 NOTANI YOSHIHIRO;KATO TAKAYUKI
分类号 H01L25/18;H01L23/538;H01L23/66;H01L25/04;(IPC1-7):H01L25/04 主分类号 H01L25/18
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