| 摘要 |
PROBLEM TO BE SOLVED: To make bypass portions have similar functions to conventional bypass diodes, by forming in the same plane of a semiconductor layer the bypass portions of reverse direction currents flowing therethrough more easily than other portions of the semiconductor layer. SOLUTION: With 81 (9×9) matrix-element positions arranged at a space of 1cm on the surface of a semiconductor layer 4, needle-like probes are contacted simultaneously or in succession from the surface of its upper insulation film 5. Then, between the probes and opposite electrodes in contact with the rear surface of the semiconductor layer 4, the respective voltages having both the polarities set positive on the probe sides and the values not smaller than the withstand voltage of a solar battery 1 are given instantaneously. By the applications of these reverse direction voltages not smaller than the withstand voltage, in the respective 81 positions arranged at an equal space in the same plane of the semiconductor layer 4, bypass portions 6 with very small sectional areas of about 1μm in diameter wherethrough reverse direction currents flow more easily than other portions are formed. These bypass portions 6 are broken down by the applications of the lower reverse direction voltages than other portions of the semiconductor layer 4 for large reverse currents to flow therethrough, functioning similarly to bypass diodes. Therefore, the bypass portions 6 can be made to have similar functions to conventional bypass diodes. |
