| 摘要 |
PROBLEM TO BE SOLVED: To prevent diffusing reaction of copper and base layer material, by interposing a conductive intermediate layer between a surface layer composed of copper or its alloy of a third electrode layer and a base layer which is in contact with the other surface of a board. SOLUTION: An aramid film is used as a film board 1, and a through hole 2 for series connection is formed in a position in the vicinity of an insulating region of the board 1. After a first electrode layer 4 is formed on the film board 1, and an electrode layer 71 for series connection turning to a base layer of a third electrode layer is formed on the opposite surface of the film board 1 by sputtering of Ag, through holes 3 for current collection are dispersedly formed. A transparent electrode layer 6 as a second electrode layer is formed on the first electrode layer 4 by using an ITO film. An intermediate layer 72 is formed by Ti sputtering. The intermediate layer 72 permeates into the through holes 3, and covers extended parts of an amorphous semiconductor layer 5 and the transparent electrode layer 6 which permeated into the through holes. When a base layer is composed of metal like Ag which is easily alloyed with Cu of a surface layer, diffusing reaction of Cu and base layer material can be prevented by interposing the intermediate layer. |
