| 摘要 |
PROBLEM TO BE SOLVED: To prevent the short-circuit of high melting point metal silicide between a gate electrode and a source drain, via a side wall. SOLUTION: After a gate electrode 3 composed of polycrystalline silicon is formed, a silicon oxide film of about several 100Åin thickness is formed, and a silicon nitride film 6 of about several 1000Åin thickness is continuously formed. Anisotrotic etching is so performed that the silicon nitride film 6 is left only on the side wall of the gate electrode 3. In this process, the silicon oxide film 5 is also etched at the time of overetching of the silicon nitride film 6, so that the side wall protrudes from the upper surface of the gate electrode 3. After that, a high melting point metal thin film is formed, heat treatment is performed, and an unreacted high melting point metal is eliminated. Thus a silicide layer 10 is formed on the surface of the gate electrode 3 and on the surface of a diffusion layer.
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