| 摘要 |
<p>A thin film protected capacitor structure (300) having a thin film capacitor and a protection device is provided on an integrated circuit wafer. The wafer has a low resistivity substrate (302) of a first type, disposed under an epitaxial layer (304) of a second type different from the first type. The structure includes a first heavily doped region (306), which is of the first type, in and through the epitaxial layer (304), and an oxide layer (308) having a first oxide region disposed above the first heavily doped region (306). The first heavily doped region (306) and the low resistivity substrate (302) form the first plate of the thin film capacitor. There is also included a metal layer (310) disposed above the first oxide region forming the second plate of the thin film capacitor and a second heavily doped region (324) in the epitaxial layer (304).</p> |
