| 摘要 |
A power distribution circuit is provided that isolates both power source and load faults. In one embodiment, the power distribution circuit includes two power MOSFETs connected with the channels of the power MOSFETs in series and having their gates electrically connected together. The body diode of one power MOSFET is aligned with the opposite polarity with respect to polarity of the body diode of the second power MOSFET. The power MOSFETs are adapted to be coupled between a first power source and a load. The power distribution circuit also includes a first sensor that detects when the power MOSFETs conduct too much current and switches the power MOSFETs off by discharging the gate voltage of both power MOSFETs during such overcurrent conditions. Accordingly, when both power MOSFETs are switched off, the opposing polarity of the body diodes in the power MOSFETs ensures that one of the body diodes will be reversed biased in case of a short circuit failure in either the load or the power source. Incorporating N such power circuits in a power distribution module for distributing power from N power sources to a single load provides a fault tolerant power distribution module that can tolerate up to N-1 power source faults. |
