| 发明名称 |
LOW RESISTANCE CONTACT SEMICONDUCTOR DIODE |
| 摘要 |
A semiconductor device wherein the layer of highly doped p-type material (2) typically found in devices of the prior art is replaced with a layer of highly doped n-type material (11) and a thin layer of highly doped p-type material (2) thus facilitating low resistance contact, transparency to radiation produced by the device and confinement with low loss of radiation produced by laser devices.
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| 申请公布号 |
WO9720353(A1) |
申请公布日期 |
1997.06.05 |
| 申请号 |
WO1996GB02914 |
申请日期 |
1996.11.27 |
| 申请人 |
THE SECRETARY OF STATE FOR DEFENCE;ASHLEY, TIMOTHY;PRYCE, GRAHAM, JOHN |
发明人 |
ASHLEY, TIMOTHY;PRYCE, GRAHAM, JOHN |
| 分类号 |
H01L29/43;H01L21/28;H01L29/20;H01L29/205;H01L31/0216;H01L33/40;H01S5/00;H01S5/183;H01S5/20;H01S5/223;H01S5/32;(IPC1-7):H01L33/00;H01L31/022 |
主分类号 |
H01L29/43 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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