发明名称 Semiconductor device
摘要 It is an object to improve the heat radiating efficiency while maintaining close contact between a sealing resin and a heat sink. A plurality of grooves (21) are formed in the top main surface of the heat sink (51). Hence, the contact between the sealing resin filling a portion between a lead frame provided facing the top main surface and the heat sink (51) is excellent. These grooves (21) are formed on both sides of a center region (22) zonally extending in a position which divides the top main surface into two. A power semiconductor element with heat generation is disposed above the center region (22) and a controlling semiconductor element controlling the power semiconductor element is disposed above the region where the grooves (21) are formed. This suppresses the thermal resistance interposed in the path through which the loss heat generated in the power semiconductor element is radiated to the heat sink (51). <IMAGE> <IMAGE>
申请公布号 EP0777272(A2) 申请公布日期 1997.06.04
申请号 EP19960114255 申请日期 1996.09.05
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 HIRAKAWA, SATOSHI;TAKAO, HARUO
分类号 H01L23/29;H01L21/56;H01L23/28;H01L23/36;H01L23/433;H01L23/495;H01L25/07;H01L25/18 主分类号 H01L23/29
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