| 摘要 |
Flash EEPROM with NAND structure cells has a plurality of memory cell arrays (AR11 to AR1n and AR21 to AR2n) formed in each of p-type wells (1 and 2) formed in turn in n-type semiconductor substrate. Each of the memory cell arrays has NAND structure of memory cell transistors (e.g., M111-M181) arranged in column direction and connected serially with drain and source of every two adjacent cell transistors being formed by a single n<+> diffusion region. Each of NAND structure cells has at its ends first and second select transistors, respectively. Control gates of corresponding cell transistors forming the NAND structure cells in respective memory cell arrays (AR11-AR1n) are connected together by control gate lines (e.g., CG11-CG18) which are formed in row direction constituting word lines. Similarly, control gates of the first and second select transistors of respective memory cell arrays are connected respectively to first and second select gate lines (e.g., SG11 and SG12) parallel to the word lines. The corresponding structual elements including memory cell arrays, memory cell transistors, control gate lines, and select gate lines formed in p-type well (2) are in symmetry with those in p-type well (1) with respect to source line S. Bit lines lying in column direction are respectively connected to the first select transistor of each of the memory cell arrays symmetrically disposed in p-type wells (1 and 2). Erase control means is additionally provided to selectively supply erase control voltages, consisting of either a first voltage equal to well potential or a second voltage sufficient to cause data erasure at memory cell transistors, to those selected and unselected control gate lines, thereby to enable word line-by-word line erasure of stored data. <IMAGE> |
