| 摘要 |
<p>A method of integrated circuit fabrication is disclosed. Layers of silicon nitride 19 and silicide dioxide 17 are formed upon a silicon substrate. These layers are etched to create a channel 23 having the width of the intended gate. The silicon dioxide is then wet etched. Next, polysilicon 31 is deposited within the channel. The silicon dioxide 17 and the silicon nitride 19 layers are then removed. A "T"-shaped polysilicon gate facilitates the formation of rectangular-shaped silicon nitride 33 spacers. Subsequent salicidation is performed. <IMAGE> <IMAGE></p> |
