| 摘要 |
PURPOSE:To obtain a cubic boron nitride film which is rigid and has high thermal conductivity and high electrical insulating properties by introducing a gaseous mixture of nitrogen and rare gas into a reaction chamber and generating electronic cyclotron resonant plasma and also impressing bias voltage on a base material while performing vapor deposition on the base material. CONSTITUTION:The inside of a reaction chamber 1 is preliminarily exhausted and a gaseous mixture of nitrogen or a compd. contg. nitrogen and rare gas is introduced into a plasma generating chamber 9 and the pressure of the inner part is maintained at the prescribed pressure. A magnetic field is impressed to the inside of the chamber 9 by a coil 10 for impressing the magnetic field and microwave is introduced via a waveguide 12. Electron cyclotron resonance plasma is generated and vapor deposition of boron is performed on a base material 3. High-frequency electric power is impressed on a base plate holder 4 from a high-frequency power source 8 to generate self-bias and a CBN film 16 is formed on the base material 3. |
