| 发明名称 |
Method and device for dissolving surface layer of semiconductor substrate |
| 摘要 |
<p>Disclosed is a method of dissolving a surface of a semiconductor substrate or a thin-film surface layer formed on the semiconductor substrate, with an oxidizing agent and fluorine-series gas. The method is characterized in that an initial dissolution rate is controlled by gradually increasing a concentration of fluorine-series gas introduced in a dissolving solution containing the oxidizing agent. <IMAGE></p> |
| 申请公布号 |
EP0777265(A2) |
申请公布日期 |
1997.06.04 |
| 申请号 |
EP19960119198 |
申请日期 |
1996.11.29 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KANEKO, MINAKO;SHIMAZAKI, AYAKO;ISHIZAKI, ITSURO |
| 分类号 |
G01N1/28;H01L21/00;H01L21/302;H01L21/304;H01L21/306;H01L21/308;H01L21/66;(IPC1-7):H01L21/30 |
主分类号 |
G01N1/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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