发明名称 Semiconductor memory device equipped with voltage generator circuit
摘要 <p>A semiconductor circuit comprises an oscillator producing an oscillation signal, a voltage generation circuit generating, when activated, an output voltage in response to the oscillation signal, and a sensor circuit outputting a sensor signal when the output signal reached a predetermined voltage and supplying the sensor signal to the voltage generation circuit to deactivate the voltage generation circuit irrespective of the oscillation signal. &lt;IMAGE&gt;</p>
申请公布号 EP0777231(A2) 申请公布日期 1997.06.04
申请号 EP19960119026 申请日期 1996.11.27
申请人 NEC CORPORATION 发明人 MATANO, TATSUYA
分类号 G11C11/407;G11C5/14;(IPC1-7):G11C5/14 主分类号 G11C11/407
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