| 摘要 |
The present invention is to provide a method for fabricating ONO dielectric layer of capacitor having bottom-oxide/nitride/top-oxide. The method for fabricating the ONO dielectric layer of the capacitor having the bottom-oxide/nitride/top-oxide according to the present invention, a bottom oxide layer is formed and a nitride layer is deposited. Then, a top oxide layer is formed, wherein the step of depositing a nitride layer is performed by varying the gas ratio of NH3 and DCS with two steps at the same temperature. Thereby, the present invention provides the semiconductor devices with an improved electric property and uniformity compared with the prior art.
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