| 摘要 |
A method for avoiding separation between a TEOS layer and the underlying dielectric layer is described, A first dielectric layer is deposited over semiconductor device structures in and on a semiconductor substrate and planarized. A conducting layer is deposited overlying the first dielectric layer and patterned thereby exposing portions of the first dielectric layer, The exposed portions of the first dielectric layer are treated with N2 plasma, A second dielectric layer is deposited overlying the patterned conducting layer and the exposed portions of the first dielectric layer, The treating of the exposed portions of the first dielectric layer with N2 plasma improves adhesion between the second dielectric layer and the exposed portions of the first dielectric layer,
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