发明名称 CHEMICAL VAPOR DEPOSITION - PRODUCED SILICON CARBIDE HAVING IMPROVED PROPERTIES
摘要 beta -silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400-1500 DEG C range, pressure 6.7kPa or less, H2/methyltrichlorosilane molar ratios of 4:-30: 1 and a deposition rate of 1 mu m or less. <IMAGE>
申请公布号 KR970008982(B1) 申请公布日期 1997.06.03
申请号 KR19930024883 申请日期 1993.11.22
申请人 CVD INC. 发明人 GOELA, JITENDRA S.;TAYLOR, RAYMOND L.;BURNS, LEE E.
分类号 C01B31/36;B28B1/30;C04B35/565;C04B35/571;C23C16/01;C23C16/32;C23C16/44;(IPC1-7):C01B31/36;C30B25/02;C04B35/56 主分类号 C01B31/36
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