发明名称 |
CHEMICAL VAPOR DEPOSITION - PRODUCED SILICON CARBIDE HAVING IMPROVED PROPERTIES |
摘要 |
beta -silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400-1500 DEG C range, pressure 6.7kPa or less, H2/methyltrichlorosilane molar ratios of 4:-30: 1 and a deposition rate of 1 mu m or less. <IMAGE> |
申请公布号 |
KR970008982(B1) |
申请公布日期 |
1997.06.03 |
申请号 |
KR19930024883 |
申请日期 |
1993.11.22 |
申请人 |
CVD INC. |
发明人 |
GOELA, JITENDRA S.;TAYLOR, RAYMOND L.;BURNS, LEE E. |
分类号 |
C01B31/36;B28B1/30;C04B35/565;C04B35/571;C23C16/01;C23C16/32;C23C16/44;(IPC1-7):C01B31/36;C30B25/02;C04B35/56 |
主分类号 |
C01B31/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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