发明名称 |
METHOD AND APPARATUS FOR PRODUCING SILICON SUBSTRATE |
摘要 |
<p>The invention is to a method for producing a silicon substrate by masking a substrate (31) to define a deposition area. The silicon, in the form of a gas, is deposited (33) with the silicon onto the deposition area. Deposition is made by a plasma deposition with the substrate under a non-oxygen bearing gas or liquid (32) to prevent the formation of silica. <IMAGE></p> |
申请公布号 |
JPH09142991(A) |
申请公布日期 |
1997.06.03 |
申请号 |
JP19960240759 |
申请日期 |
1996.09.11 |
申请人 |
TEXAS INSTR INC (TI) |
发明人 |
DONARUDO SHII ABOTSUTO;MOHENDORA ESU BAWA |
分类号 |
H05H1/26;C23C16/24;C23C16/44;C23C16/455;C23C16/513;C30B29/06;H01L21/205;H01L31/04;H01L31/18;H05H1/46 |
主分类号 |
H05H1/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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