发明名称 METHOD AND APPARATUS FOR PRODUCING SILICON SUBSTRATE
摘要 <p>The invention is to a method for producing a silicon substrate by masking a substrate (31) to define a deposition area. The silicon, in the form of a gas, is deposited (33) with the silicon onto the deposition area. Deposition is made by a plasma deposition with the substrate under a non-oxygen bearing gas or liquid (32) to prevent the formation of silica. <IMAGE></p>
申请公布号 JPH09142991(A) 申请公布日期 1997.06.03
申请号 JP19960240759 申请日期 1996.09.11
申请人 TEXAS INSTR INC (TI) 发明人 DONARUDO SHII ABOTSUTO;MOHENDORA ESU BAWA
分类号 H05H1/26;C23C16/24;C23C16/44;C23C16/455;C23C16/513;C30B29/06;H01L21/205;H01L31/04;H01L31/18;H05H1/46 主分类号 H05H1/26
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