| 摘要 |
A lateral double-diffused MOSFET has a semiconductor substrate, a drain region formed on the substrate, a gate insulation film formed on the drain region, a gate electrode formed on the gate insulation film, source and drain openings formed through the gate electrode, a first conductive region formed under the drain region, a source electrode formed on the source openings, a drain electrode formed on the drain openings, and second conductive regions for connecting the drain electrode to the first conductive region. The source and drain openings are cyclically arranged so that at least two rows of source openings are arranged between adjacent drain openings, to reduce the ON resistance of the MOSFET.
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