METHOD IN THE MANUFACTURING OF A SEMICONDUCTOR DEVICE

摘要

In a method of selectively etching in the fabrication of a semiconductor device, an amorphous layer (6) of said semiconductor material is deposited on a crystalline substrate (1) of the same semiconductor material. At least one dielectric layer (7) is deposited on the amorphous layer (6) such as to prevent crystallization of the amorphous layer (6). The dielectric layer (7) is preferably deposited with the aid of either a PECVD, SACVD, MBE technique or a spin-on technique. The resultant structure (1) is patterned and the dielectric layer (7) and the amorphous semiconductor layer (6) then etched away within a predetermined region (9). The method may form a sub-stage in the manufacture of a bipolar transistor having a self-registered base-emitter structure.