| 摘要 |
<p>The invention concerns a capacitive pressure transducer structure and a method for manufacturing the same. The transducer structure comprises a contiguous diaphragm structure (2), which at least in some parts is conducting to the end of forming a first electrode (4) of a transducing capacitor, a substrate (3) which is permanently bonded to a first surface of said diaphragm structure (2) and comprises a second electrode (5) of said transducing capacitor, spaced at a distance from and aligned essentially at said first electrode (4), and a silicon structure (1), which is permanently bonded to a second surface of said diaphragm structure (2), incorporating a space (21) suited to accommodate the deflection of said first electrode (4). According to the invention, the angle a formed between vertical walls (11) of said space (21) and said first electrode (4) is smaller than or equal to 90 DEG , and the material surrounding said space (21) is silicon or doped silicon. <IMAGE></p> |
