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发明名称
Verfahren zur Herstellung von nichtflüchtigen Halbleiterspeichervorrichtungen
摘要
申请公布号
DE69123992(T2)
申请公布日期
1997.05.28
申请号
DE19916023992T
申请日期
1991.03.20
申请人
KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP
发明人
YAMADA, SEIJI, C/O INTELLECT. PROP. DIVISIO, TOKYO 105, JP;NARUKE, KIYOMI, C/O INTELLECT. PROP. DIVISION, TOKYO 105, JP
分类号
H01L21/8247;H01L21/28;H01L29/788;H01L29/792;(IPC1-7):H01L21/336;H01L21/334;H01L21/82
主分类号
H01L21/8247
代理机构
代理人
主权项
地址
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