| 摘要 |
<p>A light emitting diode array includes a light emitting area formed on a semiconductor substrate, a diffusion prevention layer formed on the semiconductor substrate, and an insulating layer formed on the diffusion prevention layer. The diffusion prevention layer has a lower edge and the insulating layer has a level drop at this lower edge. An interconnection conductor extends on the insulating layer and is in ohmic contact with the light emitting region through holes in the insulating layer and the diffusion prevention layer. The interconnection conductor has a stepped portion at the level drop of the insulating layer. In order to increase adhesion between the interconnection conductor and the underlying structure, the stepped portion of the interconnection conductor is located in a wide-width segment of the interconnection conductor. A method for forming such a light emitting diode array includes the steps of providing a semiconductor substrate, forming a light emitting region on the semiconductor substrate, forming a diffusion prevention layer on the semiconductor substrate surrounding the light emitting region, forming an insulating layer on the diffusion prevention layer, covering the light emitting region and the insulating layer with a conductive layer, forming a mask layer on a predetermined portion of the conductive layer, the mask layer having a wide-width segment located on the stepped portion, and selectively forming the interconnection conductor by etching the conductive layer using the mask layer. Several embodiments of both the method and the array are disclosed.</p> |
