发明名称 PROCESS OF MANUFACTURE OF QUAZI-UNIDIMENSIONAL CONDUCTIVE FILAMENTS
摘要 FIELD: semiconductor microelectronics, design of semiconductor instruments of SHF range. SUBSTANCE: layer of another semiconductor in which chains of atoms of electrically active impurity are formed is deposited on stepped surface of semiconductor crystal. Semiconductor heterocouple is so selected that difference of outputs ensures spatial separation of channels of majority current carriers and impurity ions. EFFECT: increased mobility of majority current carriers in structure containing quasi-unidimensional conductive filaments thanks to suppression of impurity scattering.
申请公布号 RU94037400(A) 申请公布日期 1997.05.27
申请号 RU19940037400 申请日期 1994.09.29
申请人 BUGAEV A.S.;LIVOTOVA N.P.;SENICHKIN A.P. 发明人 BUGAEV A.S.;LIVOTOVA N.P.;SENICHKIN A.P.
分类号 H01L21/20 主分类号 H01L21/20
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