| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
| 摘要 |
PURPOSE:The operating speed of an I<2>L circuit is increased and its power consumption is reduced by partially burying an insulator into a substrate and opening holes in the substrate thereby providing conductivity to semiconductor portions and conductive substrate. |
| 申请公布号 |
JPS533080(A) |
申请公布日期 |
1978.01.12 |
| 申请号 |
JP19760076390 |
申请日期 |
1976.06.30 |
| 申请人 |
HITACHI LTD |
发明人 |
KANEKO KENJI;OKABE TAKAHIRO;TOBUTSU TOMOYUKI;OKADA YUTAKA |
| 分类号 |
H01L21/8226;H01L21/33;H01L21/331;H01L27/02;H01L27/082;H01L29/70;H01L29/73 |
主分类号 |
H01L21/8226 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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