发明名称 SUBSTRATE PROCESSOR AND PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain a resist pattern with a good dimensional accuracy. SOLUTION: First, on a substrate 1 to be processed, a resist film 2 is formed. Then, to the resist film 2, a solution 4 of a hydrous polymer is applied. Subsequently, bridging macromolecules in the hydrous polymer, a hydrogel film 4a with a predetermined film thickness is formed. Further, after via the hydrogel film 4a the resist film 2 is exposed to be patterned, the hydrogel film 4a is removed therefrom.
申请公布号 JPH09139343(A) 申请公布日期 1997.05.27
申请号 JP19960182330 申请日期 1996.07.11
申请人 TOSHIBA CORP 发明人 MARUYAMA YUMIKO;IKEDA TAKAHIRO
分类号 G03F7/11;G03F7/09;G03F7/16;G03F7/38;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/11
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