| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a TFT(thin film transistor) wherein channel length is reduced, leak current is hard to be generated, and self-alignment is perfect, and shorten the manufacturing process of a TFT without using silicide. SOLUTION: A Ta thin film is formed on a glass substrate 1, and gate electrode 2 is formed by patterning. An insulating film 3 of Ta2 O5 is formed, and three layers of a gate insulating film 4 of Si3 N4 , I-type microcrystal silicon 5 and a channel protecting film 6 of Si3 N4 are laminated in this order by using a plasma CVD equipment. Photoresist 7 is spread on the channel protecting film 6, rear exposure is performed from the gate side by using the gate as a mask, and the photoresist 7 self-aligned with the gate electrode 2 is left. By using the photoresist 7 as a mask, the I-type microcrystal silicon 5 is doped with PH3 ions, and N<+> type microcrystal silicon 8 is formed. After that, source.drain electrodes 9a, 9b are formed, and a reverse stagger type TFT is obtained.</p> |
