Silicon single crystal with low defect density and method of producing same

摘要

A silicon single crystal having low defects, such as flow pattern defects and laser scattering tomography defects, and high dielectric breakdown strength in oxides and a method of producing the same using the Czochralski technique comprising steps of adjusting a first passage time of a growing crystal for a first temperature range of the melting point to 1,200 DEG C so as to be 190 min. or shorter and adjusting a second passage time thereof for a second temperature range of 1,150 DEG C to 1,080 DEG C so as to be 60 min. or longer during crystal growth.