Process for fabricating a metallized interconnect structure in a semiconductor device

摘要

A process for fabricating a metallized interconnect structure in a semiconductor device includes the steps of depositing a first aluminum layer (22) into a via opening (16) in a dielectric layer (18). A doping layer (24) is deposited by high density plasma sputtering to form a portion thereof in the bottom of the via opening (16). A second aluminum layer (26) is chemical vapor deposited to overlie the doping layer (24) and to fill the via opening (16). An annealing process can then be carried out to diffuse metal dopants from the doping layer (24) into nearby metal regions to provide a uniformly doped metal region within the via opening (16).