发明名称 |
Isolated sidewall capacitor having a compound plate electrode |
摘要 |
A capacitor structure is provided, with a first conductor on top of a substrate having at least one layer of dielectric material thereon; a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; and a third conductor formed in the second opening.
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申请公布号 |
US5633781(A) |
申请公布日期 |
1997.05.27 |
申请号 |
US19950577168 |
申请日期 |
1995.12.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SAENGER, KATHERINE L.;KOTECKI, DAVID E. |
分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01K1/16 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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