摘要 |
<p>PROBLEM TO BE SOLVED: To control the internal power source potential supplied to a semiconductor memory circuit to maintain a within a fixed range even if an external power source potential varys. SOLUTION: A circuit C1 in which plural MOS transistors Q4 , Q5 of which a drain and a gate are connected in series to a resister R1 connected to an external power source potential Vcc are connected in series, is grounded. It is detected whether an external power source potential Vcc is a prescribed value or less or more by this transistor circuit C1, when it is the prescribed value or less, the other MOS transistors connected to the external power source potential Vcc are made to be in a continuity state, and the external power source potential Vcc is supplied to a semiconductor memory circuit without dropping voltage. When the external power source potential Vcc is the prescribed value or more, the external power source potential Vcc is dropped through the other MOS transistor, and supplied to the semiconductor memory circuit.</p> |