发明名称 SEMICONDUCTOR POTENTIAL SUPPLYING DEVICE AND SEMICONDUCTOR MEMORY USING IT
摘要 <p>PROBLEM TO BE SOLVED: To control the internal power source potential supplied to a semiconductor memory circuit to maintain a within a fixed range even if an external power source potential varys. SOLUTION: A circuit C1 in which plural MOS transistors Q4 , Q5 of which a drain and a gate are connected in series to a resister R1 connected to an external power source potential Vcc are connected in series, is grounded. It is detected whether an external power source potential Vcc is a prescribed value or less or more by this transistor circuit C1, when it is the prescribed value or less, the other MOS transistors connected to the external power source potential Vcc are made to be in a continuity state, and the external power source potential Vcc is supplied to a semiconductor memory circuit without dropping voltage. When the external power source potential Vcc is the prescribed value or more, the external power source potential Vcc is dropped through the other MOS transistor, and supplied to the semiconductor memory circuit.</p>
申请公布号 JPH09139085(A) 申请公布日期 1997.05.27
申请号 JP19950298252 申请日期 1995.11.16
申请人 MITSUBISHI ELECTRIC CORP 发明人 UKITA MOTOMU
分类号 G06F1/26;G05F1/46;G11C11/407;G11C11/413;(IPC1-7):G11C11/413 主分类号 G06F1/26
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