发明名称 METHOD AND DEVICE FOR PLASMA TREATMENT
摘要 <p>PROBLEM TO BE SOLVED: To attenuate the electrostatic attraction force between a sample and a sample stand, to confirm the separation of the sample from the sample stand, and to quickly and safely carry the process-finished sample. SOLUTION: A vacuum gauge is used to give a decision whether or not a wafer 85 and a sample stand 6 which is given after finish of process of a sample are separated. First, while a process is being conducted, inert gas is stored in a tank 81, and the pressure P1 of the tank 81 is measured by a vacuum manometer 82. The pressure Pj of the tank 81 is monitored at all times by the vacuum manometer 82 while an electrostatic attraction removing treatment is being conducted, and the separation of the wafer 85 and the sample stand 68 is judged by comparing the pressure P1 and Pj. When the holding strength of electrostatic attraction is attenuated, as the pressure Pj becomes small, and the separation of the wafer and the sample stand 68 can be confirmed. Accordingly, the process-finished wafer can be conveyed quickly and safely.</p>
申请公布号 JPH09139417(A) 申请公布日期 1997.05.27
申请号 JP19950295125 申请日期 1995.11.14
申请人 HITACHI LTD;HITACHI KASADO ENG KK 发明人 TSUBAKI TAKESHI;NAKADA KENJI;TAMURA NAOYUKI;YAMAMOTO HIDEYUKI;HIRANO HIROYOSHI;SAKAGUCHI MASAMICHI
分类号 B23Q3/15;C23F4/00;H01L21/302;H01L21/3065;H01L21/68;H01L21/683;H02N13/00;(IPC1-7):H01L21/68;H01L21/306 主分类号 B23Q3/15
代理机构 代理人
主权项
地址