| 摘要 |
PROBLEM TO BE SOLVED: To suppress the compositional deviation of ferroelectric material and the deterioration in dielectric characteristics, and to provide a ferroelectric material capacitor having excellent characteristics by a method wherein a layer consisting of a compound, having an excellent conductive pyrochroite type structure and containing a specific element, is arranged between a conductive ceramic electrode and the capacitor. SOLUTION: At least on either of the upper electrode layer and the lower electrode layer consisting of the conductive ceramic electrode 3 of a ferroelectric capacitor 1, a layer 4, consisting of a compound of good conductive pyrochroite type structure and containing at least an element contained in a ferroelectric material 2 and an element contained in conductive ceramic 3, is arranged between the electrode layer and the ferroelectric material 2 of and capacitor. For example, after formation of an RuO2 film 3 and a Pb2 O7 thin film 4 on a high resistance silicon substrate, a ferroelectric Pb (Zr, Ti) O3 layer 2 is formed. Besides, a Pb2 Ru2 O7 thin film 4 and an RuO2 film 3 are successively formed by lamination, and a capacitor structure is formed. |
