Semiconductor memory device having self-refreshing function

摘要

A timing generating circuit generates a signal SRE defining a period in which a self-refreshing operation is carried out based on a signal ext+E,ovs RAS+EE and a signal ext+E,ovs CAS+EE . An internal voltage down-converting circuit controls the level of an internal power supply voltage intVcc to be generated in the period defined by the signal SRE lower in the self-refreshing operation than in a normal operation. As a result, a semiconductor memory device is obtained which reduces current consumption in the self-refreshing operation by simple control in an internal circuit.