Press contact type semiconductor device

摘要

Provided is a press contact type semiconductor device which improves the shape of an insulator formed along an outer peripheral edge and a major surface of a semiconductor substrate, simplifies alignment of an anode heat compensator and a cathode heat compensator, causes no biting, causes no separation in molding, and has excellent heat dissipation. In the press contact type semiconductor device, the inner periphery of a ring-shaped insulator (22) which is formed along an edge of the overall periphery and a major surface of a semiconductor substrate (6) provided with a P-N junction in its interior comprises a tapered portion (22a) along the inner peripheral direction and a vertical portion (22b) forming a perpendicular inner peripheral diameter which is continuous to this tapered portion (22a).