| 摘要 |
<p>PROBLEM TO BE SOLVED: To make the reduction in a device area possible without decreasing reading speed. SOLUTION: The method of manufacturing a nonvolatile semiconductor storage wherein adjacent memory transistors 41 and 44 share a source and drain region 32 is provided. In this method, an N<-> layer 55 having the same conductivity type as that of the source and drain region 32 and having one end connected to the source and drain region 32 is formed in a channel region provided below a floating gate 51.</p> |
