| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an element in which gates are precisely formed. SOLUTION: In order to make the size of aperture parts 14p of gates structurally finer and more uniform than the conventional one, the gates are formed by aligning (in 2μm level) a conventional low-resolution mask in an element which can driven at lower voltage and utilizing the inclining faces of a silicon column-shaped chip structure. Consequently, gate aperture parts 14p in submicron level (0.3-1μm) are uniformly formed in a mask pattern having about 2μm diameter by plasma etching. Moreover, formation of the element on a glass substrate 11 is made easy by employing a low temperature process, such as reactive ion etching, electron beam vapor deposition method, and the manufacturing method is made applicable to manufacture of panel display elements, ultra high frequency amplifiers, sensors, etc.</p> |
