发明名称 Laser planarization of zone 1 deposited metal films for submicron metal interconnects
摘要 A method of laser planarizing metallic thin films minimizes the laser fluences required to melt or nearly melt the metalization. This is accomplished by reducing the optical reflectivity of the metallic lines and vias by using textured thin films. This reduction of optical reflectivity, in turn, reduces the minimum fluence needed to melt or nearly melt the metal using a laser, thus improving the process window and minimizing the damage to the surrounding media.
申请公布号 US5633195(A) 申请公布日期 1997.05.27
申请号 US19950532376 申请日期 1995.09.22
申请人 INTERNATIONAL BUSINESS MACHINES, CORP. 发明人 GUTHRIE, WILLIAM L.;LUSTIG, NAFTALI E.
分类号 B23K26/00;B23K26/16;C23C14/14;C23C14/34;C23C14/58;C23C26/00;H01L21/268;H01L21/306;H01L21/3205;H01L21/321;(IPC1-7):H01L21/26 主分类号 B23K26/00
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