发明名称 |
METHOD OF CREATING SUBLITHOGRAPHY IMAGE AND STRUCTURE |
摘要 |
PROBLEM TO BE SOLVED: To form a sublithography image made by the crossing of two spacers. SOLUTION: A substrate 100 is prepared, which has a first pattern 135 of the material having a substantially vertical sidewall and capable of selective etching. A first sidewall spacer 145 is made of material capable of selective etching to the first pattern 135. A second pattern 148 of the material crossing the first pattern 135 and capable of selective etching is made. The sidewall of the second pattern 148 is substantially vertical. A second sidewall spacer 150 is made of material capable of selective etching to the material of the second pattern 148. The material of the second pattern 148 is etched, leaving the second sidewall spacer 150. Or, the material of the first pattern 135 or the material of the second pattern 148 can be removed, or left in proper places, or flattened. |
申请公布号 |
JPH09139376(A) |
申请公布日期 |
1997.05.27 |
申请号 |
JP19960262171 |
申请日期 |
1996.10.02 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
KENISU II BEIRUSUTEIN JIYUNIA;KUROODO ERU BAATEIN;JIEEMUZU EMU RIISU;JIYATSUKU EI MANDERUMAN |
分类号 |
H01L21/306;H01L21/033;H01L21/311;H01L21/3213;H01L21/46;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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