| 摘要 |
PROBLEM TO BE SOLVED: To provide an element with which the error of mask alignment such as the capacitor and the like formed in a semiconductor device can be measured by a method wherein two capacitors, on which at least one of the upper and the lower conductive films opposing each other is divided into two parts, are provided. SOLUTION: Two capacitors 5a and 5b, which are formed by dividing into two parts either of the opposing upper layer conductive films 4a and 4b and the opposing lower layer conductive films 2a and 2b, are provided on a semiconductor substrate. Based on the capacitance of the two capacitors 5a and 5b, the measurement of the alignment error of the pattern, formed by the same layer as the upper conductive films 4a and 4b against the pattern formed by the same layer as the lower conductive films 2a and 2b, can be made possible. For example, the two capacitors 5a and 5b are formed in such a manner that their capacitance changes to opposite direction with each other against the relative deviation between the upper conductive films and the lower conductive films to the measuring direction of alignment error. |
