| 摘要 |
A semiconductor device has a multi-stage power amplifier, which is composed of a plurality of transistors each having an input terminal and an output terminal. The transistors are disposed on a chip in such a way that the input terminals and output terminals of the respective transistors are arranged in directions so as to alternate from one another. A ground metallization layer is formed on a back and a side surface and on an outside perimeter section of a front surface of the chip and a ground terminal of each transistor is connected to the ground metallization layer. Each of the transistors comprises a gate pad, a source pad, a drain pad and an active region which are formed on a semi-insulating GaAs substrate. The gate pad, the source pad and the drain pad are in contact respectively with a gate electrode, a source electrode and a drain electrode formed in the active region. All transistors constituting an ultra-high frequency multi-stage power amplifier are implemented onto a single chip, thus enhancing device miniaturization and preventing undesirable oscillation.
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