| 摘要 |
PROBLEM TO BE SOLVED: To increase the activation concentration of an imputity diffusion layer, and realize low resistance contact with metal. SOLUTION: In the surface of an Si substrate 1, an impurity diffusion layer 4a is formed with which an Al electrode 6 is in contact from above. The surface layer 4a contains Ge concentration of at least 1×10<21> cm<-3> as impurities for changing the lattice constant, in the thermally non-equilibrium state. The lattice constant of the surface layer 4a is set larger than that of Si containing the same concentration Ge in the thermal equilibrium state. Thereby the height of a Schottky barrier of a contact formed between the surface layer 4a and the electrode 6 is decreased. The surface layer 4a contains electrically active B as impurities for imparting carriers. The concentration of B is higher than or equal to the solubility limit in the thermal equilibrium state in Si. By containing Ge, the mobility of the carrier in the surface layer 4a becomes larger than the mobility in Si.
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