摘要 |
<p>PROBLEM TO BE SOLVED: To eliminate a patterning defect caused by insufficient etching and excessive etching by allowing terminal detection in etching of a metal layer for metal minute pattern formation. SOLUTION: A t first, a first metal layer 2a for forming a minute pattern and a second metal layer 2b for patterning terminal detection on a thin film 3 provided on a substrate 4 so that both layers 2a, 2b may not mutually come in contact. Next, a desired resist pattern 1a is formed on the first metal layer 2a. Further, while measuring a continuity by the passage of a current to the second electrode layer 2b, the first metal layer exposed in the resist pattern 1a is etched so as to form a metal minute pattern together with performing etching equally on the second metal layer 2b. Then, etching is finished when a continuity disappears.</p> |