发明名称 MANUFACTURE OF METAL MINUTE PATTERN
摘要 <p>PROBLEM TO BE SOLVED: To eliminate a patterning defect caused by insufficient etching and excessive etching by allowing terminal detection in etching of a metal layer for metal minute pattern formation. SOLUTION: A t first, a first metal layer 2a for forming a minute pattern and a second metal layer 2b for patterning terminal detection on a thin film 3 provided on a substrate 4 so that both layers 2a, 2b may not mutually come in contact. Next, a desired resist pattern 1a is formed on the first metal layer 2a. Further, while measuring a continuity by the passage of a current to the second electrode layer 2b, the first metal layer exposed in the resist pattern 1a is etched so as to form a metal minute pattern together with performing etching equally on the second metal layer 2b. Then, etching is finished when a continuity disappears.</p>
申请公布号 JPH09139388(A) 申请公布日期 1997.05.27
申请号 JP19960250068 申请日期 1996.09.20
申请人 NIKON CORP 发明人 MIZUNOE KATSUZO
分类号 C23F1/00;G03F1/22;G03F7/40;H01L21/306;H01L21/3213;H01L21/768;H05K3/06 主分类号 C23F1/00
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