SEMICONDUCTOR DEVICE, DISPLAY DEVICE FORMED BY USING THE SAME AND THEIR PRODUCTION

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor device which operates at a high speed and has a low threshold characteristic, an active matrix display device formed by applying the same and a process for producing the same. SOLUTION: The upper parts of semiconductor layers (5, 6, 9) are provided with hydrogen supplying layers 13 apart from the semiconductor layers (5, 6, 9) and further, the upper parts of these hydrogen supplying layers (13) are provided with hydrogen diffusion suppressing layers 14 for suppressing the outward diffusion that hydrogen escapes upward from the hydrogen supplying layers (13) in contact with the hydrogen supplying layers 13. These hydrogen diffusion suppressing layers 14 are composed of a high melting metal or its compd. The hydrogen supplying layers 13 are formed by depositing SiN or amorphous Si by a plasma CVD method.