| 摘要 |
A method for forming fine patterns of photoresist comprising the step exposing photoresist so as to obtain good patterns by removing the region of the photoresist abnormally formed after exposing and by precorrecting bad patterns formed in exposing process; and the step etching the upper part of the exposed photoresist before the next developing process is disclosed. Thereby, it is possible to enhance the exposed state and the resolution of photoresist and to be utilized in the phase inversion mask, the silylation process, etc.
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