MANUFACTURING PROCESS OF SEMICONDUCTOR ELEMENTS

摘要

A manufacturing process of a semiconductor element capable of a gate electrode having a size smaller than a threshold size of a mask for a gate electrode is disclosed. In accordance with the manufacturing process of a semiconductor element, a spiking due to a direct coupling between a metal wiring and a silicon substrate is prevented. Since a semiconductor element of a minimal line width smaller than a threshold size of a mask can be achieved by using a conventional photo-exposed apparatus, the feature and reliance of an element are improved.