| 摘要 |
<p>A very thin (less than 350 angstrom) layer of silicon dioxide (SiO2) is produced using plasma-enhanced chemical vapor deposition (PECVD) by substantially increasing the time duration of pre-coat and soak time steps of the PECVD process and substantially reducing the flow of silane (SiH4), the applied high frequency power and the applied pressure in the PECVD process.</p> |
