Method of fabricating semiconductor device and semiconductor device fabricated thereby

摘要

A method of fabricating a semiconductor device comprises forming a first mixed crystal semiconductor layer (106) comprising AlAs and InAs; applying a solution containing a material that is easily combined with fluorine to the surface of the first mixed crystal semiconductor layer (106) exposed to the atmosphere so that the material contained in the solution combines with fluorine that sticks to the surface of the first mixed crystal semiconductor layer (106); and annealing the first mixed crystal semiconductor layer (106) in a vacuum at a high temperature. In this method, since the fluorine on the surface of the first mixed crystal semiconductor layer (106) exposed to the atmosphere is combined with the material included in the solution and removed together with the material, a first mixed crystal semiconductor layer (106) having no fluorine is produced. Therefore, unwanted infiltration of fluorine into the first mixed crystal semiconductor layer (106) is avoided, resulting in a highly reliable semiconductor device with desired characteristics.