OPTO-ELECTRONIC COMPONENT MADE FROM II-VI SEMICONDUCTOR MATERIAL
摘要
The component has an active layer (4), barrier layers (3, 5) and optionally a buffer layer (2) at least one of which contains a beryllium-containing chalcogenide. The active layer comprises several strata, for example a super-lattice of BeTe/ZnSe or BeTe/ZnCdSe. Where an active ZnSe layer on a GaAs substrate (1) is used, matching of the III-V materials and II-VI materials is achieved with low electrical resistance by a pseudo-graduated buffer layer (2) by incorporation of a beryllium-containing chalcogenide.
申请公布号
WO9718592(A2)
申请公布日期
1997.05.22
申请号
WO1996DE02110
申请日期
1996.11.06
申请人
SIEMENS AKTIENGESELLSCHAFT;FISCHER, FRANK;LUGAUER, HANS-JUERGEN;LITZ, THOMAS;LANDWEHR, GOTTFRIED;WAAG, ANDREAS
发明人
FISCHER, FRANK;LUGAUER, HANS-JUERGEN;LITZ, THOMAS;LANDWEHR, GOTTFRIED;WAAG, ANDREAS