发明名称 |
Method of forming studs within an insulating layer on a semiconductor wafer |
摘要 |
<p>Forming inter level studs of at least two different materials, in an insulating layer on a semiconductor wafer comprises: (a) forming a layer of insulating material on a semiconductor wafer; (b) planarising the insulating layer; (c) forming a first group of vias through the insulating layer; (d) forming a layer of first conducting material on the insulating layer; (e) forming a second group of vias through the first conducting material layer and insulating layer; (f) forming a layer of a second conductive material filling the first and second group of vias; (g) removing the second conductive layer to expose the first conductive material layer, such that the second conductive material remains only in the first and second via groups; and (h) removing the exposed first conductive material layer. Also claimed is the method as above in which steps (b),(h) and (i) are achieved by chemically-mechanically polishing, (c) and (e) are etched, and dopant is implanted into the wafer through the second group of vias and the wafer is annealed after (e).</p> |
申请公布号 |
EP0774781(A2) |
申请公布日期 |
1997.05.21 |
申请号 |
EP19960308103 |
申请日期 |
1996.11.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GAMBINO, JEFFREY PETER;JASO, MARK ANTHONY;NESBIT, LARRY ALAN |
分类号 |
H01L21/28;H01L21/304;H01L21/321;H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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