发明名称 |
RAISED TUNGSTEN PLUG ANTIFUSE AND FABRICATION PROCESS |
摘要 |
<p>An antifuse comprises a lower electrode formed from a metal layer in a microcircuit. A interlayer dielectric layer is disposed over the lower electrode and has an aperture formed therein. A conductive plug, formed from a material such as tungsten, is formed in the aperture. The upper surface of the interlayer dielectric is etched back to create a raised portion of the plug. The upper edges of the plug are rounded. An antifuse layer, preferably comprising a silicon nitride, amorphous silicon, silicon nitride sandwich incorporating a thin silicon dioxide layer above or below the amorphous silicon layer or such a sandwich structure covered by a titanium nitride layer, is disposed above the plug. An upper electrode, preferably comprising a metal layer is disposed over the antifuse layer.</p> |
申请公布号 |
EP0774164(A1) |
申请公布日期 |
1997.05.21 |
申请号 |
EP19960922380 |
申请日期 |
1996.05.31 |
申请人 |
ACTEL CORPORATION |
发明人 |
HAWLEY, FRANK, W.;MCCOLLUM, JOHN, L.;GO, YING;ELTOUKHY, ABDELSHAFY |
分类号 |
H01L21/82;H01L23/522;H01L23/525;(IPC1-7):H01L23/525 |
主分类号 |
H01L21/82 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|