发明名称 RAISED TUNGSTEN PLUG ANTIFUSE AND FABRICATION PROCESS
摘要 <p>An antifuse comprises a lower electrode formed from a metal layer in a microcircuit. A interlayer dielectric layer is disposed over the lower electrode and has an aperture formed therein. A conductive plug, formed from a material such as tungsten, is formed in the aperture. The upper surface of the interlayer dielectric is etched back to create a raised portion of the plug. The upper edges of the plug are rounded. An antifuse layer, preferably comprising a silicon nitride, amorphous silicon, silicon nitride sandwich incorporating a thin silicon dioxide layer above or below the amorphous silicon layer or such a sandwich structure covered by a titanium nitride layer, is disposed above the plug. An upper electrode, preferably comprising a metal layer is disposed over the antifuse layer.</p>
申请公布号 EP0774164(A1) 申请公布日期 1997.05.21
申请号 EP19960922380 申请日期 1996.05.31
申请人 ACTEL CORPORATION 发明人 HAWLEY, FRANK, W.;MCCOLLUM, JOHN, L.;GO, YING;ELTOUKHY, ABDELSHAFY
分类号 H01L21/82;H01L23/522;H01L23/525;(IPC1-7):H01L23/525 主分类号 H01L21/82
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